? semiconductor components industries, llc, 2012 may, 2012 ? rev. 6 1 publication order number: tip35/d tip35a, tip35b, tip35c (npn); tip36a, tip36b, tip36c (pnp) complementary silicon high-power transistors designed for general ? purpose power amplifier and switching applications. features ? 25 a collector current ? low leakage current ? i ceo = 1.0 ma @ 30 and 60 v ? excellent dc gain ? h fe = 40 typ @ 15 a ? high current gain bandwidth product ? ? h fe ? = 3.0 min @ i c = 1.0 a, f = 1.0 mhz ? these are pb ? free devices* maximum ratings rating symbol tip35a tip36a tip35b tip36b tip35c tip36c unit collector ? emitter voltage v ceo 60 80 100 vdc collector ? base voltage v cb 60 80 100 vdc emitter ? base voltage v eb 5.0 vdc collector current ? continuous ? peak (note 1) i c 25 40 adc base current ? continuous i b 5.0 adc total power dissipation @ t c = 25 c derate above 25 c p d 125 w w/ c operating and storage junction temperature range t j , t stg ? 65 to +150 c unclamped inductive load e sb 90 mj thermal characteristics characteristic symbol max unit thermal resistance, junction ? to ? case r jc 1.0 c/w junction ? to ? free ? air thermal resistance r ja 35.7 c/w stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. 1. pulse test: pulse width = 10 ms, duty cycle 10%. *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. 25 ampere complementary silicon power transistors 60 ? 100 volts, 125 watts see detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. ordering information http://onsemi.com sot ? 93 (to ? 218) case 340d style 1 to ? 247 case 340l style 3 note: effective june 2012 this device will be available only in the to ? 247 package. reference fpcn# 16827.
tip35a, tip35b, tip35c (npn); tip36a, tip36b, tip36c (pnp) http://onsemi.com 2 marking diagrams aywwg tip3xx tip3xx aywwg 1 base 2 collector 3 emitter tip3xx = device code a = assembly location y = year ww = work week g=pb ? free package 1 base 2 collector 3 emitter to ? 247 to ? 218 ordering information device package shipping tip35ag sot ? 93 (to ? 218) (pb ? free) 30 units / rail tip35bg sot ? 93 (to ? 218) (pb ? free) 30 units / rail tip35cg sot ? 93 (to ? 218) (pb ? free) 30 units / rail TIP36AG sot ? 93 (to ? 218) (pb ? free) 30 units / rail tip36bg sot ? 93 (to ? 218) (pb ? free) 30 units / rail tip36cg sot ? 93 (to ? 218) (pb ? free) 30 units / rail tip35ag to ? 247 (pb ? free) 30 units / rail tip35bg to ? 247 (pb ? free) 30 units / rail tip35cg to ? 247 (pb ? free) 30 units / rail TIP36AG to ? 247 (pb ? free) 30 units / rail tip36bg to ? 247 (pb ? free) 30 units / rail tip36cg to ? 247 (pb ? free) 30 units / rail
tip35a, tip35b, tip35c (npn); tip36a, tip36b, tip36c (pnp) http://onsemi.com 3 ????????????????????????????????? ????????????????????????????????? (t c = 25 c unless otherwise noted) ?????????????????????? ?????????????????????? characteristic ????? ????? ??? ??? ???? ???? ??? ??? ????????????????????????????????? ????????????????????????????????? ?????????????????????? ?????????????????????? ?????????????????????? ?????????????????????? collector ? emitter sustaining voltage (note 2) (i c = 30 ma, i b = 0) tip35a, tip36a tip35b, tip36b tip35c, tip36c ????? ????? ????? ????? ??? ??? ??? ??? ???? ???? ???? ???? ? ? ? ??? ??? ??? ??? vdc ?????????????????????? ?????????????????????? ?????????????????????? ?????????????????????? ? emitter cutoff current (v ce = 30 v, i b = 0) tip35a, tip36a (v ce = 60 v, i b = 0) tip35b, tip35c, tip36b, tip36c ????? ????? ????? ????? ??? ??? ??? ??? ? ? ???? ???? ???? ???? 1.0 1.0 ??? ??? ??? ??? ?????????????????????? ?????????????????????? ? emitter cutoff current (v ce = rated v ceo , v eb = 0) ????? ????? ??? ??? ? ???? ???? 0.7 ??? ??? ?????????????????????? ?????????????????????? ?????????????????????? ? base cutoff current (v eb = 5.0 v, i c = 0) ????? ????? ????? ??? ??? ??? ? ???? ???? ???? 1.0 ??? ??? ??? ????????????????????????????????? ????????????????????????????????? on characteristics (note 2) ?????????????????????? ?????????????????????? ?????????????????????? ????? ????? ????? ??? ??? ??? ???? ???? ???? ? 75 ??? ??? ??? ? ?????????????????????? ?????????????????????? ?????????????????????? ?????????????????????? collector ? emitter saturation voltage (i c = 15 a, i b = 1.5 a) (i c = 25 a, i b = 5.0 a) ????? ????? ????? ????? ??? ??? ??? ??? ? ? ???? ???? ???? ???? 1.8 4.0 ??? ??? ??? ??? ?????????????????????? ?????????????????????? ?????????????????????? ? emitter on voltage (i c = 15 a, v ce = 4.0 v) (i c = 25 a, v ce = 4.0 v) ????? ????? ????? ??? ??? ??? ? ? ???? ???? ???? 2.0 4.0 ??? ??? ??? ????????????????????????????????? ????????????????????????????????? dynamic characteristics ?????????????????????? ?????????????????????? ?????????????????????? small ? signal current gain (i c = 1.0 a, v ce = 10 v, f = 1.0 khz) ????? ????? ????? ??? ??? ??? ???? ???? ???? ? ??? ??? ??? ?????????????????????? ?????????????????????? current ? gain ? bandwidth product (i c = 1.0 a, v ce = 10 v, f = 1.0 mhz) ????? ????? ??? ??? ???? ???? ? ??? ??? mhz 2. pulse test: pulse width = 300 s, duty cycle 2.0%.
tip35a, tip35b, tip35c (npn); tip36a, tip36b, tip36c (pnp) http://onsemi.com 4 figure 1. power derating t c , case temperature ( c) 0 125 0 25 175 75 100 75 100 50 125 25 150 p d , power dissipation (watts) 50 figure 2. switching time equivalent test circuits 0.3 figure 3. turn ? on time i c , collector current (amperes) 0.02 1.0 30 0.07 1.0 10 t j = 25 c i c /i b = 10 v cc = 30 v v be(off) = 2 v t, time (s) 0.5 0.3 0.1 0.05 0.5 3.0 5.0 0.03 0.7 2.0 0.7 7.0 t r 0.2 2.0 20 t d (pnp) (npn) turn ? on time turn ? off time +2.0 v 0 t r 20 ns -11.0 v 10 to 100 s 3.0 r l -30 v v cc duty cycle 2.0% 10 r b to scope t r 20 ns v bb +4.0 v for curves of figures 3 & 4, r b & r l are varied. input levels are approximately as shown. for npn, reverse all polarities. 0 +9.0 v -11.0 v 10 to 100 s t r 20 ns duty cycle 2.0% 3.0 r l -30 v v cc 10 r b to scope t r 20 ns
tip35a, tip35b, tip35c (npn); tip36a, tip36b, tip36c (pnp) http://onsemi.com 5 0.5 1.0 2.0 7.0 0.3 3.0 5.0 0.7 i c , collector current (amperes) figure 4. turn ? off time 10 t, time (s) 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 10 20 30 t j = 25 c v cc = 30 v i c /i b = 10 i b1 = i b2 t s t f (pnp) (npn) t s t f i c , collector current (amps) h fe , dc current gain figure 5. dc current gain 200 500 0.2 0.5 2.0 100 0.1 100 50 20 10 1.0 v ce = 4.0 v t j = 25 c 5.0 10 20 5.0 50 pnp npn 1000 2.0 1.0 forward bias there are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. safe operating area curves indicate i c ? v ce limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. the data of figure 6 is based on t c = 25 c; t j(pk) is variable depending on power level. second breakdown pulse limits are valid for duty cycles to 10% but must be derated when t c 25 c. second breakdown limitations do not derate the same as thermal limitations. reverse bias for inductive loads, high voltage and high current must be sustained simultaneously during turn ? off, in most cases, with the base to emitter junction reverse biased. under these conditions the collector voltage must be held to a safe level at or below a specific value of collector current. this can be accomplished by several means such as active clamping, rc snubbing, load line shaping, etc. the safe level for these devices is specified as reverse bias safe operating area and represents the voltage ? current conditions during reverse biased turn ? off. this rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. figure 7 gives rbsoa characteristics. v ce , collector-emitter voltage (volts) 7.0 20 1.0 50 100 0.2 0 0.5 secondary breakdown thermal limit bonding wire limit 1.0ms dc 300 s 2.0 1.0 100 30 i c , collector current (amps) 10ms figure 6. maximum rated forward bias safe operating area 50 20 10 5.0 0.3 2.0 3.0 5.0 10 30 70 t c = 25 c tip35a, 36a tip35b, 36b tip35c, 36c v ce , collector-emitter voltage (volts) 40 60 0 80 100 5.0 0 15 20 40 30 i c , collector current (amps) figure 7. maximum rated forward bias safe operating area 25 10 10 20 30 50 70 90 t j 100 c tip35a tip36a tip35b tip36b tip35c tip36c
tip35a, tip35b, tip35c (npn); tip36a, tip36b, tip36c (pnp) http://onsemi.com 6 figure 8. inductive load switching test circuit voltage and current waveforms notes: a. l1 and l2 are 10 mh, 0.11 , chicago standard transformer corporation c ? 2688, or equivalent. b. input pulse width is increased until i cm = ? 3.0 a. c. for npn, reverse all polarities. input 50 mje180 r bb1 20 r bb2 = 100 v bb2 = 0 v bb1 = 10 v v ce monitor l1 (see note a) l2 (see note a) tut v cc = 10 v i c monitor + - r s = 0.1 50 + - 5.0 v 0 -3.0 a -10 v t w = 6.0 ms (see note b) input voltage collector current collector voltage v (br)cer 0 0 100 ms
tip35a, tip35b, tip35c (npn); tip36a, tip36b, tip36c (pnp) http://onsemi.com 7 package dimensions sot ? 93 (to ? 218) case 340d ? 02 issue e style 1: pin 1. base 2. collector 3. emitter 4. collector a d v g k s l u b q 123 4 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: millimeter. e c j h dim min max min max inches millimeters a --- 20.35 --- 0.801 b 14.70 15.20 0.579 0.598 c 4.70 4.90 0.185 0.193 d 1.10 1.30 0.043 0.051 e 1.17 1.37 0.046 0.054 g 5.40 5.55 0.213 0.219 h 2.00 3.00 0.079 0.118 j 0.50 0.78 0.020 0.031 k 31.00 ref 1.220 ref l --- 16.20 --- 0.638 q 4.00 4.10 0.158 0.161 s 17.80 18.20 0.701 0.717 u 4.00 ref 0.157 ref v 1.75 ref 0.069 to ? 247 case 340l ? 02 issue f n p a k w f d g u e 0.25 (0.010) m yq s j h c 4 123 ? t ? ? b ? ? y ? notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: millimeter. 2 pl 3 pl 0.63 (0.025) m tb m ? q ? l dim min max min max inches millimeters a 20.32 21.08 0.800 8.30 b 15.75 16.26 0.620 0.640 c 4.70 5.30 0.185 0.209 d 1.00 1.40 0.040 0.055 e 1.90 2.60 0.075 0.102 f 1.65 2.13 0.065 0.084 g 5.45 bsc 0.215 bsc h 1.50 2.49 0.059 0.098 j 0.40 0.80 0.016 0.031 k 19.81 20.83 0.780 0.820 l 5.40 6.20 0.212 0.244 n 4.32 5.49 0.170 0.216 p --- 4.50 --- 0.177 q 3.55 3.65 0.140 0.144 u 6.15 bsc 0.242 bsc w 2.87 3.12 0.113 0.123 style 3: pin 1. base 2. collector 3. emitter 4. collector
tip35a, tip35b, tip35c (npn); tip36a, tip36b, tip36c (pnp) http://onsemi.com 8 on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5817 ? 1050 tip35/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
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